Y. Vidal, S. Gaillard, J. Arnaud
Appl Opt. 1994 Oct 20;33(30):6947-52. doi: 10.1364/AO.33.006947.
We present an electrical model for modulation and noise of laser diodes that takes spectral-hole burning into account and, unlike previous models, is accurate at the quantum level. The active part of the laser diode is represented by a capacitance-expressing carrier storage and a series resistance 1 + β, where β is proportional to the spectral-hole depth. These two elements are followed by a negative impedance converter. The modulation rate measured on this electrical model is in excellent agreement with the theoretical expression. Amplitude noise is simulated by two independent noise sources whose spectral densities are independent of the nonlinearity.
LIEN PAYANT VERS L’ARTICLE : ELECTRICAL MODEL FOR HIGH POWER DENSITY LASER DIODES